SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce a layout area by eliminating the need for an element isolation region for isolating an active region.SOLUTION: A semiconductor device comprises: an active region 1a which is surrounded by an element isolation region 2 and extends in a first direction (X direction); a silicon pillar (SP) 5 which divides the active region 1a in the first direction into a first lower diffusion layer 9A and a second lower diffusion layer 9B; a first gate electrode 11aA which covers a first lateral face S1 of the SP; a first channel region that composes the first lateral face S1; a second gate electrode 11aB which covers a second lateral face S2 of the SP; a second channel region which composes the second lateral face S2; and a conductor layer 16 arranged on a top face of the SP. The first lower diffusion layer 9A, the first gate electrode 11aA, the first channel region and the conductor layer 16 compose a first transistor (Tr) 50A. The second lower diffusion layer 9B, the second gate electrode 11aB, the second channel region and the conductor layer 16 compose a second Tr 50B. The first Tr 50A and the second Tr 50B are connected in series via the conductor layer 16.