| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used. |
| 申请公布号 |
US2015079790(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201214356809 |
申请日期 |
2012.11.16 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Nishimura Eiichi;Kotsugi Tadashi;Yamashita Fumiko;Adachi Kenji |
| 分类号 |
H01L21/308;H01L21/3065 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a silicon nitride layer or a silicon oxide layer to cover a side wall portion of a patterned silicon-containing layer formed on a substrate; and selectively removing the silicon-containing layer through plasma etching so that the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left, wherein in the plasma etching, an etching gas containing a SF6 gas is used. |
| 地址 |
Tokyo JP |
