TRANSISTOR, CLOCKED INVERTER CIRCUIT, SEQUENTIAL CIRCUIT, AND SEMICONDUCTOR DEVICE INCLUDING SEQUENTIAL CIRCUIT

摘要

A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.

主权项

1. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer including a channel formation region;a first gate electrode and a second gate electrode;a first insulating layer and a second insulating layer;a source electrode; anda drain electrode, wherein the first gate electrode faces the oxide semiconductor layer with the first insulating layer interposed therebetween, wherein the second gate electrode faces the oxide semiconductor layer with the second insulating layer interposed therebetween, wherein the second gate electrode is in contact with the first gate electrode in at least one opening in the first insulating layer and the second insulating layer, and wherein the oxide semiconductor layer comprises:
a first side surface in contact with the source electrode and a second side surface in contact with the drain electrode; andat least one third side surface facing the second gate electrode with the second insulating layer interposed therebetween and without the source electrode and the drain electrode interposed therebetween.