FIN WIDTH MEASUREMENT USING QUANTUM WELL STRUCTURE

摘要

A method for accurately electrically measuring a width of a fin of a FinFET, using a semiconductor fin quantum well structure is provided. The semiconductor fin quantum well structure includes a semiconductor substrate and at least one semiconductor fin coupled to the substrate. Each of the semiconductor fin is sandwiched by an electrical isolation layer from a top and a first side and a second side across from the first side, to create a semiconductor fin quantum well. At least one gate material is provided on each side of the electrical isolation layer. A dielectric layer is provided over the top of the electrical isolation layer to further increase the electrical isolation between the gate materials. The width of the semiconductor fin is measured accurately by applying a resonant bias voltage across the fin by applying voltage on the gate materials from either side. The peak tunneling current generated by the applied resonant bias voltage is used to measure width of the fin.

主权项

1. A method, comprising:
providing a semiconductor fin quantum well structure, the structure comprising:
a semiconductor fin;an electrical isolation layer covering the fin at a top, a first side and a second side opposite the first side;a dielectric layer above the top isolation layer;a first layer of gate material adjacent the first side isolation layer; anda second layer of gate material adjacent the second side isolation layer; applying a resonant voltage bias across the fin by applying a first voltage to the first layer of gate material and a second voltage to the second layer of gate material; measuring a peak tunneling current through the isolation layer on the first side, across a width of the fin and through the isolation layer on the second side; and determining the width of the fin based on the measured peak tunneling current.