DUMMY BARRIER LAYER FEATURES FOR PATTERNING OF SPARSELY DISTRIBUTED METAL FEATURES ON THE BARRIER WITH CMP

摘要

A semiconductor device comprises a plurality of device features formed on a substrate and a plurality of dummy features formed on the substrate and across an open region between the device features. Adjacent device features are spaced apart by a distance of 100 microns or more. Each device feature includes a barrier island and a metal layer on top of the barrier island. Each dummy feature has a structure that corresponds to the structure of the barrier island. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. A semiconductor device, comprising:
a plurality of device features formed on a substrate, wherein each device feature includes a barrier island and a metal layer on top of the barrier island and wherein adjacent device features are spaced apart by a distance of 100 microns or more; and a plurality of dummy features formed on the substrate and across an open region between and among the device features of the plurality, wherein a structure of each dummy corresponds to a structure to the barrier island.