发明名称 |
PHOTO DIODE AND METHOD OF FORMING THE SAME |
摘要 |
A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer. |
申请公布号 |
US2015076637(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314025890 |
申请日期 |
2013.09.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
WANG TZU-JUI;CHOU KENG-YU;CHUANG CHUN-HAO;HSU MING-CHIEH;YAMASHITA YUICHIRO;LIU JEN-CHENG;YAUNG DUN-NIAN |
分类号 |
H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. A photo diode, comprising:
a substrate; a first bottom electrode corresponding to a first pixel over the substrate; a second bottom electrode corresponding to a second pixel over the substrate; a photo conversion layer over the first bottom electrode and the second bottom electrode; a top electrode over the photo conversion layer; a color filter layer over the top electrode; and a dielectric layer for separating a first portion of the color filter layer corresponding to the first pixel from a second portion of the color filter layer corresponding to the second pixel, wherein a refractive index of the dielectric layer is lower than a refractive index of the color filter layer. |
地址 |
Hsinchu TW |