发明名称 PHOTO DIODE AND METHOD OF FORMING THE SAME
摘要 A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.
申请公布号 US2015076637(A1) 申请公布日期 2015.03.19
申请号 US201314025890 申请日期 2013.09.13
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 WANG TZU-JUI;CHOU KENG-YU;CHUANG CHUN-HAO;HSU MING-CHIEH;YAMASHITA YUICHIRO;LIU JEN-CHENG;YAUNG DUN-NIAN
分类号 H01L31/0232;H01L31/18 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A photo diode, comprising: a substrate; a first bottom electrode corresponding to a first pixel over the substrate; a second bottom electrode corresponding to a second pixel over the substrate; a photo conversion layer over the first bottom electrode and the second bottom electrode; a top electrode over the photo conversion layer; a color filter layer over the top electrode; and a dielectric layer for separating a first portion of the color filter layer corresponding to the first pixel from a second portion of the color filter layer corresponding to the second pixel, wherein a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.
地址 Hsinchu TW