发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A nonvolatile semiconductor storage device is provided with a memory-cell region; a peripheral-circuit region disposed adjacent to the memory-cell region a first memory-cell unit disposed in a first layer located in the memory-cell region; a second memory-cell unit disposed in a k-th layer of the memory-cell region where k is an integer equal to or greater than 2, the second memory-cell unit having an element region extending in a first direction and having a first width in a second direction crossing the first direction; and a peripheral-circuit element disposed in the first layer located in the peripheral-circuit region. Two or more dummy element each having a second width 2n+1 times greater than the first width in the second direction are disposed in the k-th layer located in the peripheral-circuit region where n is an integer equal to or greater than 0. |
申请公布号 |
US2015076578(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414291816 |
申请日期 |
2014.05.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKAMOTO Wataru;YAMADA Kenta |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile semiconductor storage device comprising:
a memory-cell region; a peripheral-circuit region disposed adjacent to the memory-cell region; a first memory-cell unit disposed in a first layer located in the memory-cell region; a second memory-cell unit disposed in a k-th layer of the memory-cell region where k is an integer equal to or greater than 2, the second memory-cell unit having an element region extending in a first direction and having a first width in a second direction crossing the first direction; and a peripheral-circuit element disposed in the first layer located in the peripheral-circuit region; wherein two or more dummy elements each having a second width 2n+1 times greater than the first width in the second direction are disposed in the k-th layer located in the peripheral-circuit region where n is an integer equal to or greater than 0. |
地址 |
Minato-ku JP |