发明名称 SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM
摘要 [Problem] To perform data readout at a low voltage without reducing reliability. [Solution] A sense amplifier is provided with a memory string that includes memory cells, a bit line electrically connected to one end of the memory string, and a sense amplifier which is electrically connected to the bit line and which performs sensing. The sense amplifier comprises: a first transistor for which one end is electrically connected to a first node upon an electrical current path of the bit line, and for which the other end is electrically connected to a second node; a second transistor which is electrically connected between the second node and a sense node; and a third transistor for which a gate is connected to the first node, and which is electrically connected between the second node and a voltage-adjustable third node.
申请公布号 WO2015037416(A1) 申请公布日期 2015.03.19
申请号 WO2014JP72061 申请日期 2014.08.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIHARA MASAHIRO;ABIKO NAOFUMI
分类号 G11C16/06;G11C16/02;G11C16/04 主分类号 G11C16/06
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