TFT AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, X-RAY DETECTOR AND DISPLAY DEVICE

摘要

A TFT and a manufacturing method therefor, an array substrate and a manufacturing method therefor, an X-ray detector and a display device. The manufacturing method comprises: forming a thin film (3') of a gate insulating layer, a thin film (4') of a semiconductor layer, and a thin film (5') of a passivation shielding layer in sequence; forming a pattern (5') comprising the passivation shielding layer through one patterning process, so as to enable the part in the thin film of the semiconductor layer which is shielded by the passivation shielding layer to form a pattern of an active layer (4a'); and enabling the part in the thin film of the semiconductor layer which is not shielded by the passivation shielding layer to form a pattern comprising a source electrode (4c') and a drain electrode (4b') through an ion doping process, wherein the source electrode (4c') and the drain electrode (4b') are located at both sides of the active layer (4a'), and the source electrode (4c'), the drain electrode (4b') and the active layer (4a') are located on the same layer. The manufacturing method can reduce the number of patterning processes, and can improve the performance of a thin-film transistor in an array substrate.