SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film; or provide a transistor using an oxide semiconductor film where oxygen deficiency is reduced; or provide a transistor having excellent electric characteristics.SOLUTION: A semiconductor device comprises a first insulation film, a first oxide semiconductor film, a gate insulation film and a gate electrode. The first insulation film has a first region and a second region. The first region is a region hard to transmit oxygen compared with the second region and the first oxide semiconductor film is arranged at least on the second region.