METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE, AND COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor substrate which can easily form a compound semiconductor layer containing a GaAs layer that is excellent in crystallinity and flatness of a surface, on an Si substrate; and to provide the compound semiconductor substrate.SOLUTION: In a method for manufacturing a compound semiconductor substrate formed by sequentially stacking a first compound semiconductor layer, a second compound semiconductor layer and a third compound semiconductor layer on an Si substrate, a step of forming the second compound semiconductor layer is a step of simultaneously emitting a Ga material, an As material and an Sb material onto the first compound semiconductor layer. A ratio of a molecular beam intensity of the Sb material to a molecular beam intensity of the Ga material, which is necessary for setting a formation speed of the second compound semiconductor layer at 1μm per one hour, is 1 or more.