| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor element in which characteristic fluctuation and optical responsibility are inhibited and which has excellent long-term reliability; and provide a manufacturing method of the nitride compound semiconductor element.SOLUTION: A nitride compound semiconductor element 10 comprises: semiconductor layers 15, 16 which include a group III atom and a nitrogen atom as compositional atoms; and a source electrode 1S, a gate electrode 1G and a drain electrode 1D which are formed in vicinity to the semiconductor layer 16, in which a concentration of at least a part of deuterium or tritium in the semiconductor layers 15, 16 is 10cmand over.</p> |
