| 发明名称 |
Photoresist Coating Scheme |
| 摘要 |
A method includes rotating a wafer at a first speed for a first time duration. The wafer is rotated at a second speed that is lower than the first speed for a second time duration after the first time duration. The wafer is rotated at a third speed that is higher than the second speed for a third time duration after the second time duration. A photoresist is dispensed on the wafer during the first time duration and at least a portion of a time interval that includes the second time duration and the third time duration. |
| 申请公布号 |
US2015079806(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201314029226 |
申请日期 |
2013.09.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Hsu Chih-Hsien;Chou Hong-Hsing;Lin Hu-Wei;Hsieh Chi-Jen;Ye Jr-Wei;Huang Yuan-Ting;Chiang Ching-Hsing;Teng Hua-Kuang;Lin Yen-Chen;Poe Carolina;Huang Tsung-Cheng;Chu Chia-Hung |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
rotating a wafer at a first speed for a first time duration; rotating the wafer at a second speed that is lower than the first speed for a second time duration after the first time duration; rotating the wafer at a third speed that is higher than the second speed for a third time duration after the second time duration; and dispensing a photoresist on the wafer during the first time duration and at least a portion of a time interval that includes the second time duration and the third time duration. |
| 地址 |
HSIN-CHU TW |
