Methods of Forming Printable Integrated Circuit Devices and Devices Formed Thereby

摘要

Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.

主权项

1. A method of forming an integrated circuit device, comprising:
forming a sacrificial layer on a handling substrate; forming a semiconductor active layer on the sacrificial layer; selectively etching through the semiconductor active layer and the sacrificial layer to define a patterned substrate comprising a first portion of the semiconductor active layer; forming a multi-layer electrical interconnect network on the patterned substrate; encapsulating the multi-layer electrical interconnect network with an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer; selectively etching through the inorganic capping layer and the first portion of the semiconductor active layer to expose the sacrificial layer; and selectively removing the sacrificial layer from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the inorganic capping layer.