SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A semiconductor memory device is provided. The semiconductor memory device includes a memory cell array including cell strings coupled between bit lines and a common source line, each of the cell strings comprising a plurality of memory cells stacked above a substrate. The semiconductor memory device also includes a peripheral circuit configured to supply a negative voltage to one or more word lines coupled to the cell strings and supply a positive voltage to the common source line, wherein the peripheral circuit supplies the positive voltage and the negative voltage before a program operation is performed.

主权项

1. A method of operating a three-dimensional semiconductor memory device having cell strings coupled between bit lines and a common source line, the method comprising:
driving row lines coupled to the cell strings so that a potential of a channel of each of the cell strings has substantially the same magnitude or decreases as a distance between the channel and the common source line becomes smaller; and performing a program operation to a selected area of the cell strings.