MODE CHANGING CIRCUITRY

摘要

A circuit includes a PMOS transistor, an NMOS transistor, and a logic level generation section comprising an input and a logic level output. The PMOS gate receives an input voltage having a voltage level determined based on an operational voltage, the PMOS drain is coupled to the NMOS drain and the input of the logic level generation section, and the PMOS source is coupled to the operational voltage. The NMOS gate receives a voltage that causes the NMOS transistor to have a first driving capability. The first driving capability of the NMOS transistor is less than that of the PMOS transistor if the input voltage has a voltage level greater than a predetermined voltage level.

主权项

1. A circuit comprising:
a PMOS transistor having a PMOS drain, a PMOS source, and a PMOS gate; an NMOS transistor having an NMOS drain, an NMOS source, and an NMOS gate; and a logic level generation section comprising an input and a logic level output; wherein the PMOS gate is configured to receive an input voltage having a voltage level determined based on an operational voltage; the PMOS drain is coupled to the NMOS drain and the input of the logic level generation section; the PMOS source is coupled to the operational voltage; the NMOS gate is configured to receive a voltage that causes the NMOS transistor to have a first driving capability; and the first driving capability of the NMOS transistor is less than that of the PMOS transistor if the input voltage has a voltage level greater than a predetermined voltage level.