NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD

摘要

A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line.

主权项

1. A program method for a nonvolatile memory device, the method comprising:
detecting threshold voltages of selected memory cells by applying a first verification voltage and a second verification voltage to a word line connected to the selected memory cells; applying a first pulse to a word line connected to a first memory cell among the selected memory cells having a threshold voltage lower than the first verification voltage; and applying a second pulse to a word line connected to a second memory cell among the selected memory cells having a threshold voltage higher than the first verification voltage and lower than the second verification voltage, the second pulse having a lower voltage level than the first pulse, wherein during a first period corresponding to application of the first pulse and a second period corresponding to application of the second pulse, the first and second memory cells are set up with program bit line voltages having a same level.