APPARATUS AND METHOD OF STORING DATA AT A MULTI-BIT STORAGE ELEMENT

摘要

A storage device includes non-volatile memory and a controller. A method performed in the data storage device includes receiving, at the controller, first data to be stored at the non-volatile memory. The method further includes sending, from the controller, the first data, first dummy data, and second dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory. The single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states. The first dummy data and the second dummy data prevent a storage element of the single physical page from being programmed to a particular voltage state of the multiple voltage states.

主权项

1. A method comprising:
in a data storage device including a controller and a non-volatile memory, the non-volatile memory having a plurality of memory blocks, each memory block including a plurality of word lines, each word line having memory cells configured to store a particular number of data bits therein, performing by the controller:
configuring the plurality of word lines as first word lines and second word lines, wherein the memory cells of the first word lines are configured to store a first number of user data bits and the memory cells of the second word lines are configured to store a second number of user data bits;configuring each memory block to include an alternating number of the first word lines and the second word lines;receiving user data to be stored at the non-volatile memory; andstoring the received user data in one or more of the configured memory blocks.