发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
摘要 |
A semiconductor device includes a substrate including a circuit region where a circuit element is formed, a multilayer wiring layer that is formed on the substrate and composed of a plurality of wiring layers and a plurality of via layers that are laminated, and an electrode pad that is formed on the multilayer wiring layer. An interlayer insulating film is formed in a region of a first wiring layer that is a top layer of the plurality of wiring layers, in the region the electrode pad and the first circuit region overlapping each other in a planar view of the electrode pad. |
申请公布号 |
US2015076709(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414536620 |
申请日期 |
2014.11.08 |
申请人 |
RENESAS ELECTRONICS CORPORARION |
发明人 |
Mori Ryo;Fukuoka Kazuki;Morino Naozumi;Deguchi Yoshinori |
分类号 |
H01L21/66;H01L23/00;H01L21/768;H01L23/522;H01L23/528 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |