发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 A semiconductor device includes a substrate including a circuit region where a circuit element is formed, a multilayer wiring layer that is formed on the substrate and composed of a plurality of wiring layers and a plurality of via layers that are laminated, and an electrode pad that is formed on the multilayer wiring layer. An interlayer insulating film is formed in a region of a first wiring layer that is a top layer of the plurality of wiring layers, in the region the electrode pad and the first circuit region overlapping each other in a planar view of the electrode pad.
申请公布号 US2015076709(A1) 申请公布日期 2015.03.19
申请号 US201414536620 申请日期 2014.11.08
申请人 RENESAS ELECTRONICS CORPORARION 发明人 Mori Ryo;Fukuoka Kazuki;Morino Naozumi;Deguchi Yoshinori
分类号 H01L21/66;H01L23/00;H01L21/768;H01L23/522;H01L23/528 主分类号 H01L21/66
代理机构 代理人
主权项
地址 Kawasaki-shi JP