Field Effect Transistor Structure Having One or More Fins

摘要

A field effect transistor (FET) having one or more fins provides an extended current path as compared to conventional finFETs. A raised source terminal is disposed on a fin adjacent to a sidewall spacer of a gate structure. The drain terminal and a first portion of the gate structure overlie a first well of a first conductivity type. A raised drain terminal is disposed such that it is spaced apart from the gate structure sidewalls. In some embodiments the drain terminal is disposed on a second, separate fin. the drain terminal and a second portion of the gate structure overlie a second well of a second conductivity type.

主权项

1. A transistor, comprising:
a first fin disposed on a first region of a substrate; a second fin disposed on a second region of the substrate and spaced apart from the first fin; a gate structure disposed on the first fin; a first source/drain (S/D) terminal disposed on the first fin, adjacent to a first vertical side of the first gate structure; a second S/D terminal disposed on the second fin; wherein the first region of the substrate includes a first sub-region doped with a first concentration of dopant atoms of a first conductivity type, a second sub-region doped with a second concentration of dopant atoms of a second conductivity type, and the second region of the substrate includes a third sub-region doped with the second concentration of dopant atoms of the second conductivity type.