发明名称 |
SEMICONDUCTOR DEVICE WITH LOW-K SPACER |
摘要 |
A semiconductor device includes gates and a low-k spacer. The low-k spacer includes low-k spacer portions formed upon the gate sidewalls and a low-k spacer portion formed upon a top surface of an underlying substrate adjacent to the gates. When a structure has previously undergone a gate processing fabrication stage, the gates and at least a portion of the top surface of the substrate may be exposed thereby allowing the formation of the low-k spacer. This exposure may include removing any original gate spacers, removing an original liner formed upon the original spacers, and removing any original fill material formed upon the liner. |
申请公布号 |
US2015076606(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314027720 |
申请日期 |
2013.09.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander;Surisetty Charan Veera Venkata Satya |
分类号 |
H01L29/423;H01L21/28;H01L29/78;H01L29/40;H01L29/66 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
ARMONK NY US |