METHOD AND APPARATUS FOR FORMING AN INTEGRATED CIRCUIT WITH A METALIZED COUPLING CAPACITOR

摘要

An integrated circuit includes a plurality of metal layers of bit cells of a memory cell array disposed in a first metal layer and extending in a first direction, a plurality of word lines of the memory cell array disposed in a second metal layer and extending in a second direction that is different from the first direction, and at least two conductive traces disposed in a third metal layer substantially adjacent to each other and extending at least partially across the memory cell array, a first one of the at least two conductive traces coupled to a driving source node of a write assist circuit, and a second conductive trace of the at least two conductive traces coupled to an enable input of the write-assist circuit, where the at least two conductive traces form at least one embedded capacitor having a capacitive coupling to the bit line.

主权项

1. An integrated circuit, comprising:
a plurality of bit cells of a memory cell array disposed in a first metal layer and extending in a first direction; a plurality of word lines of the memory cell array disposed in a second metal layer and extending in a second direction that is different from the first direction; and at least two conductive traces disposed in a third metal layer substantially adjacent to each other and extending at least partially across the memory cell array, a first one of the at least two conductive traces coupled to a driving source node of a write assist circuit, and a second conductive trace of the at least two conductive traces coupled to an enable input of the write-assist circuit, wherein the at least two conductive traces form at least one embedded capacitor having a capacitive coupling to the bit line.