| 摘要 |
This semiconductor memory device comprises first and second memory cells, a word line, and first and second bit lines. The first and second bit lines are each electrically connected to one end of the first and second memory cells. During read retry, a read voltage is applied to the word line, a first voltage is applied to the first bit line, a second voltage is applied to the second bit line, and the second voltage is different from the first voltage. |
