SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which enables high integration and has high reliability.SOLUTION: A silicon carbide semiconductor device comprises: a silicon carbide off substrate 101 including a main plane MP which has an off angle &thetas; with respect to a basic plane; a trench TR which is provided on the main plane MP and has a plurality of side walls SW and a bottom part BT; a gate insulation film 91 which covers the side walls SW and the bottom part BT; and a gate electrode 92 provided on the gate insulation film 91. An angle of the side wall SW in the trench TR with respect to the basic plane is more than 65° and not more than 80°. Opening directions of the plurality of side walls are aligned either to a silicon plane side or a carbon plane side.