Semiconductor Device and a Method for Forming a Semiconductor Device

摘要

A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first doping region arranged at a main surface of the semiconductor substrate, an emitter layer arranged at a back side surface of the semiconductor substrate, at least one first conductivity type area separated from the first doping region by a second doping region of the semiconductor substrate and at least one temperature-stabilizing resistance area. The first doping region has a first conductivity type and the emitter layer has at least mainly a second conductivity type. The second doping region has the second conductivity type and the at least one first conductivity type area has the first conductivity type. The at least one temperature-stabilizing resistance area is located within the second doping region and adjacent to the at least one first conductivity type area. Further, the at least one temperature-stabilizing resistance area has a lower variation of a resistance over a range of an operating temperature of the semiconductor device than at least a part of the second doping region located adjacent to the at least one temperature-stabilizing resistance area.

主权项

1. A semiconductor device with a semiconductor substrate, wherein the semiconductor substrate comprises:
a first doping region arranged at a main surface of the semiconductor substrate, wherein the first doping region comprises a first conductivity type; an emitter layer arranged at a back side surface of the semiconductor substrate, wherein the emitter layer comprises at least mainly a second conductivity type; at least one first conductivity type area separated from the first doping region by a second doping region of the semiconductor substrate, wherein the second doping region comprises the second conductivity type and the at least one first conductivity type area comprises the first conductivity type; and at least one temperature stabilizing resistance area located within the second doping region and adjacent to the at least one first conductivity type area, wherein the at least one temperature stabilizing resistance area comprises a lower variation of a resistance over a range of an operating temperature of the semiconductor device than at least a part of the second doping region located adjacent to the at least one temperature stabilizing resistance area.