发明名称 SIDE VENTED PRESSURE SENSOR DEVICE
摘要 A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.
申请公布号 US2015076630(A1) 申请公布日期 2015.03.19
申请号 US201314029783 申请日期 2013.09.17
申请人 Low Boon Yew;Foong Chee Seng;Beng Lau Teck 发明人 Low Boon Yew;Foong Chee Seng;Beng Lau Teck
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A semiconductor sensor device comprising: a substrate; a pressure sensing die and at least one other die mounted on the substrate; electrical interconnections between the pressure sensing die and the at least one other die; pressure sensitive gel material covering an active region of the pressure sensing die; a cap having a cavity formed therein mounted over the pressure sensing die, wherein: the pressure sensing die is positioned within the cavity; andthe cap has a side vent hole formed thereon that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device; and molding compound on an upper surface of the substrate encapsulating the at least one other die and at least a portion of the cap.
地址 Petaling Jaya MY