ASYMMETRIC SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

主权项

1. A semiconductor device, comprising:
a first type region comprising a first conductivity type; a second type region comprising a second conductivity type; a channel region extending between the first type region and the second type region; and a gate electrode surrounding at least some of the channel region, a first gate edge of the gate electrode separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode separated a second distance from a second type region edge of the second type region, wherein the first distance is less than the second distance.