发明名称 |
FET LOW CURRENT 3D RRAM NON-VOLATILE STORAGE |
摘要 |
<p>Non-volatile storage devices having reversible resistance storage elements are disclosed herein. In one aspect, a memory cell unit includes one or more memory cells and a transistor (e.g., FET) that is used to control (e.g., limit) current of the memory cells. The drain of the transistor may be connected to a first end of the memory cell. If the memory cell unit has multiple memory cells then the drain may be connected to a node that is common to a first end of each of the memory cells. The source of the transistor is connected to a common source line. The gate of the transistor may be connected to a word line. The same word line may connect to the transistor gate of several (or many) different memory cell units. A second end of the memory cell is connected to a bit line.</p> |
申请公布号 |
WO2015038557(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
WO2014US54864 |
申请日期 |
2014.09.09 |
申请人 |
SANDISK 3D LLC |
发明人 |
BANDYOPADHYAY, ABHIJIT;SCHEUERLEIN, ROY E.;GORLA, CHANDRASEKHAR R.;LE, BRIAN |
分类号 |
G11C13/00;H01L27/24 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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