METAL NITRIDE MATERIAL FOR THERMISTORS, MANUFACTURING METHOD THEREOF, AND FILM-TYPE THERMISTOR SENSOR

摘要

PROBLEM TO BE SOLVED: To provide: a reliable metal nitride material for thermistors which is high in heat resistance and enables the direct film formation on a film or the like; a method for manufacturing such a metal nitride material; and a film-type thermistor sensor.SOLUTION: A metal nitride material used for thermistors comprises: a metal nitride expressed by the general formula, TiGa(NO)(where 0.0≤w≤0.85; 0.70≤y/(x+y)≤0.99; 0.45≤z≤0.55; and x+y+z=1), of which the crystalline structure is a hexagonal wurtzite type single phase. A method for manufacturing the metal nitride material for thermistors comprises a film formation step for forming a film by use of a Ga vapor source and a Ti vapor source in an atmosphere containing nitrogen and oxygen according to a reactive plasma vapor deposition technique.