| 摘要 |
PROBLEM TO BE SOLVED: To reduce loss of a power transistor including a barrier layer at the time of turn off.SOLUTION: A semiconductor device includes a first-conductivity-type first semiconductor layer having a first surface and a second surface facing the first surface, and a second-conductivity-type second semiconductor layer formed on the first surface of the first semiconductor layer. Moreover, the device includes a plurality of control electrodes formed in the first and second semiconductor layers and extending in a first direction parallel to the first surface, and a plurality of first-conductivity-type third semiconductor layers and a plurality of second-conductivity-type fourth semiconductor layers alternately formed along the first direction on the side of the second semiconductor layer opposite to the side on which the first semiconductor layer is formed. Further, the device includes a plurality of first-conductivity-type fifth semiconductor layers formed in a position located on the first semiconductor layer side of the second semiconductor layer or a position surrounded by the second semiconductor layer. The fifth semiconductor layers are disposed spaced apart from each other along the first direction. |
