SYSTEMS AND METHODS FOR FORMING SOLAR CELLS WITH CuInSe2 AND Cu(In,Ga)Se2 FILMS

摘要

Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

主权项

1. A thin film deposition system (100, 200), the system comprising:
at least one supply line (120, 224, 244, 264) configured to transport a selenium vapor onto a substrate surface (114, 210, 230, 250); one or more injectors (142, 222, 242, 262) configured to mass transport copper onto the substrate surface (114, 210, 230, 250) by injecting a first reactant gas comprising a flux of copper chloride, and further mass transport indium onto the substrate surface (114, 210, 230, 250) by injecting a second reactant gas comprising a flux of indium chloride; a heater (112) configured to heat the substrate surface (114, 210, 230, 250); wherein the system is adapted to limit a reaction between the selenium vapor and the copper chloride that occurs prior to the copper chloride reaching the substrate surface (114, 210, 230, 250); and wherein the system is adapted to limit a reaction between the selenium vapor and the indium chloride that occurs prior to the indium chloride reaching the substrate surface (114, 210, 230, 250).