发明名称 Electronic Device for ESD Protection
摘要 A device includes a transistor configured for operating in a hybrid mode, an element configured for generating and injecting a current into the substrate of the transistor in the presence of an ESD pulse, and a thyristor triggerable at least by the element.
申请公布号 US2015077888(A1) 申请公布日期 2015.03.19
申请号 US201414475683 申请日期 2014.09.03
申请人 STMicroelectronics SA 发明人 Galy Philippe;Bourgeat Johan
分类号 H02H9/04 主分类号 H02H9/04
代理机构 代理人
主权项 1. An electronic device, comprising: a first terminal; a second terminal; a MOS transistor formed in a substrate and having a first conduction electrode coupled to the first terminal and a second conduction electrode coupled to the second terminal and including a parasitic bipolar transistor, the MOS transistor configured to, in the presence of a current pulse between the first and second terminals, operate in a hybrid mode including an operation of the MOS type in a sub-threshold mode and an operation of the parasitic bipolar transistor; a first element coupled between the first terminal and the substrate of the MOS transistor and configured for generating and injecting current into the substrate of the MOS transistor in the presence of a current pulse propagating from the first terminal to the second terminal; and a first thyristor including an anode coupled to the first terminal and a cathode coupled to the second terminal, the first thyristor triggerable at least by the first element in the presence of the current pulse propagating from the first terminal to the second terminal.
地址 Montrouge FR