SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor structure, comprises the following steps: providing an SOI substrate and forming a gate structure on the SOI substrate; implanting ions to induce stress in the semiconductor structure by using the gate structure as mask to form a stress-inducing region, which is located under the BOX layer on the SOI substrate on both sides of the gate structure. A semiconductor structure manufactured according to the above method is also disclosed. The semiconductor structure and the method for manufacturing the same disclosed in the present application form on the ground layer a stress-inducing region, which provides favorable stress to the semiconductor device channel and contributes to the improvement of the semiconductor device performance.

主权项

1. A method for manufacturing a semiconductor structure, comprising:
(a) providing an SOI substrate and forming a gate structure on the SOI substrate; and (b) implanting ions to induce stress in the semiconductor structure by using the gate structure as a mask to form a stress-inducing region, which is located under the BOX layer in the SOI substrate on both sides of the gate structure.