| 发明名称 |
SELECTIVE SELF-ALIGNED PLATING OF HETEROJUNCTION SOLAR CELLS |
| 摘要 |
A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process. |
| 申请公布号 |
US2015075598(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201314031732 |
申请日期 |
2013.09.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Hekmatshoartabari Bahman;Rieutort-Louis Warren S. |
| 分类号 |
H01L31/0224;H01L31/18;H01L31/0216;H01L31/20 |
主分类号 |
H01L31/0224 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming contacts on a photovoltaic device, comprising:
forming a heterojunction cell including a substrate, at least one passivation layer and at least one doped layer; forming a transparent conductor on the cell; forming a patterned barrier layer on the transparent conductor having openings therein wherein the transparent conductor is exposed through the openings in the barrier layer; and growing a conductive contact through the openings in the patterned barrier layer by a selective plating process. |
| 地址 |
Armonk NY US |
