| 摘要 |
The present invention provides a metallic sputtering target integrated with a backing plate, said metallic sputtering target being characterized by having, at the periphery thereof, a flange part that serves as a backing plate and is integrated with the target, wherein the flange part has a structure produced by repeating a partial forging procedure. Thus, the present invention addresses the problem of preventing the deformation of a metallic sputtering target integrated with the backing plate during sputtering without altering the conventionally achieved sputtering properties by improving the mechanical strength of only the flange part of the target, and therefore enabling the formation of a thin film having excellent uniformity and thereby improving the yield and reliability of a semiconductor product of which the level of fineness and the level of integration have been increasing. |
