| 摘要 |
<p>A film formation device is equipped with a sputter electrode (23) composed of an electrode part (21) and a target material (22). A direct-current power supply (41) to be used is one which can apply a direct-current voltage to the sputter electrode (23) so that 25 W or more of incident power can be applied per 1 square centimeter of the surface area of the target material (22). A chamber (10) is connected to a turbo-molecular pump (37) with an on-off valve (39) interposed therebetween. The turbo-molecular pump (37) to be used has a maximum pumping rate of 300 liters or more per second.</p> |
