发明名称 |
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY |
摘要 |
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45≦y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer. |
申请公布号 |
US2015076635(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414549254 |
申请日期 |
2014.11.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA ;WPI-AIMR, Tohoku University |
发明人 |
DAIBOU Tadaomi;ITO Junichi;KAI Tadashi;AMANO Minoru;YODA Hiroaki;MIYAZAKI Terunobu;MIZUKAMI Shigemi;ANDO Koji;YAKUSHIJI Kay;YUASA Shinji;KUBOTA Hitoshi;FUKUSHIMA Akio;NAGAHAMA Taro;KUBOTA Takahide |
分类号 |
H01L27/22;H01L43/10;H01L23/528;H01L43/02 |
主分类号 |
H01L27/22 |
代理机构 |
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代理人 |
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主权项 |
1. (canceled) |
地址 |
Minato-ku JP |