| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that includes a high speed power switch circuit having a small variation in rise time and suited for integration.SOLUTION: A first power line provided is fed with an input supply voltage, and a second power line provided supplies a bias voltage to a predetermined load circuit. A first MOS transistor provided has a source-drain current path connected between the first and second power lines and receives a control signal at a gate electrode, and a resistor provided is connected in series with the source-drain current path of the first MOS transistor. A second MOS transistor provided has a source-drain current path connected between the first and second power lines and receives a control signal at a gate electrode. A control circuit provided generates the control signal to turn the first MOS transistor on at a first timing, and generates the second control signal to turn the second MOS transistor on at a second timing after the lapse of a predetermined time. |
