SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which has improved channel mobility and high threshold voltage; and provide a manufacturing method of the silicon carbide semiconductor device.SOLUTION: An SiC semiconductor device 1 comprises: an SiC substrate 10; a gate insulation film 20 which is formed on a surface 10A of the SiC substrate 10 and composed of SiO; and a gate electrode 30 formed on the gate insulation film 20. The maximum nitrogen concentration in a region within 10 nm from a boundary face 21 of the SiC substrate 10 and the gate insulation film 20 is 3×10cmand over. The maximum nitrogen concentration in a region within 10 nm from a boundary face 22 of the gate insulation film 20 and the gate electrode 30 is 1×10cmand under.