发明名称 |
METHODS AND APPARATUSES HAVING STRINGS OF MEMORY CELLS AND SELECT GATES WITH DOUBLE GATES |
摘要 |
An apparatus, a method, and a system are disclosed. The apparatus includes a string of memory cells coupled to a select gate drain transistor that has a front control gate and a back control gate. The front and back control gates can be coupled together such that they are biased at the same voltage or separate such that they can be biased at different voltages. |
申请公布号 |
US2015078089(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314031509 |
申请日期 |
2013.09.19 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sakui Koji |
分类号 |
G11C16/26;H01L27/115 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus comprising:
a string of memory cells; and a select gate drain transistor coupled to the string of memory cells, the select gate drain transistor having a plurality of control gates. |
地址 |
Boise ID US |