发明名称 Non-volatile Memory Device With Current Injection Sensing Amplifier
摘要 A non-volatile memory device with a current injection sensing amplifier is disclosed.
申请公布号 US2015078082(A1) 申请公布日期 2015.03.19
申请号 US201314386816 申请日期 2013.03.15
申请人 Silicon Storage Technology, Inc. 发明人 Zhou Yao;Qian Xiaozhou;Bai Ning
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
主权项 1. An apparatus for use in a memory device, comprising: a current injector having a plurality of injection outputs; one or more reference cells, wherein each reference cell is connected to a different one of the plurality of injection outputs; a selected memory cell connected to one of the plurality of injection outputs different from the injection outputs to which the one or more reference cells are connected; and a comparator connected to the plurality of injection outputs, wherein the comparator comprises one or more comparator outputs that indicate the value stored in the selected memory cell.
地址 San Jose CA US