发明名称 |
Non-volatile Memory Device With Current Injection Sensing Amplifier |
摘要 |
A non-volatile memory device with a current injection sensing amplifier is disclosed. |
申请公布号 |
US2015078082(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314386816 |
申请日期 |
2013.03.15 |
申请人 |
Silicon Storage Technology, Inc. |
发明人 |
Zhou Yao;Qian Xiaozhou;Bai Ning |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus for use in a memory device, comprising:
a current injector having a plurality of injection outputs; one or more reference cells, wherein each reference cell is connected to a different one of the plurality of injection outputs; a selected memory cell connected to one of the plurality of injection outputs different from the injection outputs to which the one or more reference cells are connected; and a comparator connected to the plurality of injection outputs, wherein the comparator comprises one or more comparator outputs that indicate the value stored in the selected memory cell. |
地址 |
San Jose CA US |