DOPING OF SUBSTRATE THROUGH DOPANT-CONTAINING POLYMER FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for further development of a method for doping a substrate in an atmospheric condition without the need for using high vacuum nor using an etching technique.SOLUTION: A method for doping a substrate comprises steps of: putting, on the substrate, a coating of a composition including dopant-containing polymer and nonpolar solvent; and annealing the resultant substrate at a temperature of 750-1300°C for 1 second to 24 hours in order to cause dopant diffusion into the substrate. The dopant-containing polymer consists of polymer having dopant atoms bonded by a covalent bonding. The dopant-containing polymer includes neither nitrogen nor silicon. The method does not include a step of forming an oxide capping layer by covering the coating before the annealing step.