发明名称 Charged-Particle-Beam Processing Using a Cluster Source
摘要 A cluster source is used to assist charged particle beam processing. For example, a protective layer is applied using a cluster source and a precursor gas. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas.
申请公布号 US2015079796(A1) 申请公布日期 2015.03.19
申请号 US201414448257 申请日期 2014.07.31
申请人 FEI Company 发明人 Chandler Clive D.;Smith Noel
分类号 H01L21/306;H01L21/67 主分类号 H01L21/306
代理机构 代理人
主权项 1. A method of charged-particle beam processing, comprising: positioning a work piece in a vacuum chamber; directing an etchant precursor gas toward a work piece, wherein the gas adsorbs to the surface of the work piece; and directing a beam of charged clusters toward the work piece, the beam depositing energy into the region of interest to induce an etching chemical reaction of the adsorbed etchant precursor gas at the region of interest.
地址 Hillsboro OR US