FinFET Design Controlling Channel Thickness

摘要

System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a semiconductor fin on a top surface of a substrate; forming a diffusion barrier layer on a top surface and sidewalls of the semiconductor fin; and forming a capping layer on a top surface and sidewalls of the diffusion barrier layer, the capping layer having a band gap less than a band gap of the semiconductor fin, the diffusion barrier layer having a material composition different than material compositions of both the semiconductor fin and the capping layer.