LIGHT-EMITTING DIODES

摘要

A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

主权项

1. A light-emitting diode, comprising:
an N-type semiconductor layer; a light-emitting layer disposed on a portion of the N-type semiconductor layer to expose another portion of the N-type semiconductor layer; a P-type semiconductor layer disposed on the light-emitting layer; a P-type electrode including a first body part and a first extension part, wherein the first body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the first extension part extends from the first body part onto the exposed portion of the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the exposed portion of the N-type semiconductor layer; an N-type electrode disposed on the exposed portion of the N-type semiconductor layer; a current blocking layer disposed on a part of the P-type semiconductor layer under the P-type electrode and on a part of N-type semiconductor layer under the P-type electrode; and a transparent conductive layer disposed on a partial upper surface of the P-type semiconductor layer, and a part of the transparent conductive layer disposed between the current blocking layer and the P-type electrode.