发明名称 |
SWITCHING RESISTANCE MEMORY DEVICES WITH INTERFACIAL CHANNELS |
摘要 |
A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack. |
申请公布号 |
WO2015038158(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
WO2013US59935 |
申请日期 |
2013.09.16 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
WANG, SHIH-YUAN;YANG, JIANHUA;WILLIAMS, R STANLEY |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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