SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a 4-terminal tunnel FinFET which can modulate a threshold voltage without increasing an off-state current.SOLUTION: A 4-terminal tunnel FinFET is composed of a source part S and a drain part D which sandwich a channel part C in an x direction, and a driving gate G1 and a Vth control gate G2 which sandwich the channel part C in a y direction orthogonal to the x direction. The source part S is composed of a second source part S2 which lies on the driving gate G1 side and has a relatively high concentration (10-10cm), and a first source part S1 which lies on the Vth control gate G2 side and has a relatively low concentration (10-10cm). The second source part S2 provided on the driving gate G1 side prevents decrease in tunneling probability and the first source part S1 provided on the Vth control gate G2 side modulates a threshold voltage without increasing an off-state current.