OXIDE SINTERED COMPACT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide sintered compact suitable for forming an oxide semiconductor film of a semiconductor device having high characteristics; and provide a semiconductor device including an oxide semiconductor film formed by using the oxide sintered compact.SOLUTION: An oxide sintered compact containing at least indium and tungsten includes at least an InWOtype phase as a crystal phase. A semiconductor device 10 includes an oxide semiconductor film 14 formed by a sputtering method using the oxide sintered compact as a target.