发明名称 CRUCIBLE FOR VAPOR DEPOSITION, VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
摘要 Provided are a crucible for vapor deposition, a vapor deposition apparatus and a vapor deposition method capable of detecting a film formation rate using a sensor in vapor deposition by proximity vapor deposition. The crucible according to the present invention includes a storage section that stores a vapor deposition source, a first guide passage that guides a vaporized material emitted from the vapor deposition source toward a substrate to be treated, a wall section for defining the first guide passage and a second guide passage that diverges from a middle part of the first guide passage, penetrates the wall section and communicates with the outside.
申请公布号 US2015079274(A1) 申请公布日期 2015.03.19
申请号 US201214377608 申请日期 2012.09.11
申请人 Kakiuchi Ryohei;Yamamoto Satoru 发明人 Kakiuchi Ryohei;Yamamoto Satoru
分类号 C23C14/54;C23C14/50 主分类号 C23C14/54
代理机构 代理人
主权项 1. A crucible for vapor deposition comprising: a storage section that stores a vapor deposition source; a first guide passage that guides a vaporized material emitted from the vapor deposition source toward a substrate to be treated; a wall section for defining the first guide passage; and a second guide passage that diverges from a middle part of the first guide passage, penetrates the wall section and communicates with the outside.
地址 Ibaraki-shi JP