| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer. |
| 申请公布号 |
US2015076506(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414215321 |
申请日期 |
2014.03.17 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Yasumoto Takaaki;Yanase Naoko;Abe Kazuhide;Uchihara Takeshi;Saito Yasunobu;Naka Toshiyuki;Yoshioka Akira;Ono Tasuku;Ohno Tetsuya;Fujimoto Hidetoshi;Masuko Shingo;Furukawa Masaru;Yagi Yasunari;Yumoto Miki;Iida Atsuko |
| 分类号 |
H01L29/20;H01L29/40 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane; a first electrode provided above the surface, the first electrode having a first end; and a second electrode provided above the surface to space apart from the first electrode, the second electrode having a second end facing the first end, a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end being different from a c-axis direction of the GaN-based semiconductor layer. |
| 地址 |
Tokyo JP |
